Triple Target Sputter Source: Tri Stellar

The Triple target magnetron sputter source enables co-evaporation and multilayer deposition of up to three different materials from one compact UHV source.

Compact UHV Co-Sputtering Source

The triple target sputter source is a versatile and compact cluster sputter tool designed for co-sputtering of up to three different materials using a single magnetron source. It is ideal for applications involving alloy or multilayer thin film deposition, particularly in environments with limited space. Each target has independent power control, allowing for operation with DC, RF, pulsed DC, or HiPIMS power supplies. This instrument enables users to co-sputter multiple materials to create alloys or switch materials to form multilayers, all without the need to break  vacuum.

The Tri Stellar sputter source is constructed on a single CF100 flange so can be easily fitted to an existing PVD systems or incorporated into our NL-CUBE and custom-built NEXUS system. Check out the Stellar range of single target UHV sputter magnetrons. 

Key Features

  • Compact Co-sputtering source
  • UHV compatible
  • Bakeable to 150°C standard; 250°C bakeable option available upon request. (no need to remove magnets)
  • Three 1- inch targets
  • Independent power control
  • Choice between manual and pneumatically controlled shutter
  • Customizable in vacuum length
  • Compatible with DC, RF Pulsed DC and HiPIMS power supplies

Specifications

Head Diameter97mm (with a +/-0.1mm tolerance)
In Vacuum Length300mm as standard (Configurable)
Target OperationIndependent or Simultaneous
Target Size3 * 1 Inch (25mm)
Target thicknessUp to 3mm (nonmagnetic target), up to 0.4mm (magnetic target)
Deposition RateTypically, 5 Å/s per target, depending upon material
Source Output3*75W
Target utilisationUp to 25%
Power SupplyDC, RF, Pulsed DC (unipolar or bipolar) and HiPIMS
ShutterManual or Automated
UHVYes, Bakeable to 150°C; 250°C available on request.
Gas DistributionGas injection hood
Mounting FlangeCF100
CoolingMin Water flow 1l/min

Frequently Asked Questions

The Tri Stellar is a compact, UHV-compatible magnetron sputter source housing three independent 1-inch targets within a single CF100 flange. It enables co-sputtering of up to three different materials simultaneously to produce alloy thin films, or sequential sputtering to build multilayer stacks all without breaking vacuum. Each target has its own independent power control, giving full flexibility over deposition conditions.

The single-target Stellar sources (available in 1-inch, 2-inch, and 3-inch) are optimised for high-performance deposition of one material at a time, with target utilisation up to 40%. The Tri Stellar has a target utilisation (up to 25%) for the ability to co-sputter or sequentially sputter three materials from a single compact source on one CF100 flange making it the better choice when alloy composition or multilayer architecture is the primary research goal and chamber space is limited.

Yes. With three independently powered 1-inch targets operating simultaneously, the Tri Stellar is well suited for co-sputtering binary and ternary alloys, including high-entropy alloy (HEA) thin films. The power ratio across the three targets can be adjusted independently to control the stoichiometry of the deposited alloy.

Each of the three targets supports DC, RF, Pulsed DC (unipolar or bipolar), and HiPIMS power supplies, and targets can be run with different power supply types simultaneously. This makes the Tri Stellar suitable for depositing metals, dielectrics, oxides, and nitrides within the same deposition run.

The Tri Stellar delivers a typical deposition rate of approximately 5Å/s per target, depending on the material being sputtered and target to substrate distance. Each target operates at up to 75 W, giving a combined source output of 3 × 75 W.

Yes. The Tri Stellar is built on a single CF100 flange, allowing straightforward integration into any compatible existing PVD system. The in-vacuum length is 300 mm as standard but can be configured to suit specific chamber geometries.

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